| Anzahl | Preis |
|---|---|
| 1+ | 10.61 EUR |
| 10+ | 7.13 EUR |
| 100+ | 5.16 EUR |
| 500+ | 4.86 EUR |
| 1000+ | 4.54 EUR |
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Technische Details SIJK5100E-T1-GE3 Vishay
Description: N-CHANNEL 100 V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V, Power Dissipation (Max): 17W (Ta), 536W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V.
Weitere Produktangebote SIJK5100E-T1-GE3 nach Preis ab 5.64 EUR bis 9.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIJK5100E-T1-GE3 | Vishay Siliconix |
 Description: N-CHANNEL 100 V (D-S) MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 17W (Ta), 536W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIJK5100E-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 17W (Ta), 536W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIJK5100E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 5.64 EUR |
| SIJK5100E-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
Description: N-CHANNEL 100 V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerBSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 17W (Ta), 536W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK®10 x 12
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 9.87 EUR |
| 10+ | 7.56 EUR |
| 25+ | 6.98 EUR |
| 100+ | 6.35 EUR |
| 250+ | 6.04 EUR |
| 500+ | 5.86 EUR |