auf Bestellung 1709 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.40 EUR |
| 10+ | 7.88 EUR |
| 100+ | 6.39 EUR |
| 500+ | 5.72 EUR |
| 1500+ | 4.86 EUR |
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Technische Details SIJK5100E-T1-GE3 Vishay
Description: N-CHANNEL 100 V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerBSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V, Power Dissipation (Max): 17W (Ta), 536W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK®10 x 12, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V.
Weitere Produktangebote SIJK5100E-T1-GE3 nach Preis ab 5.64 EUR bis 9.87 EUR
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| SIJK5100E-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL 100 V (D-S) MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 17W (Ta), 536W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIJK5100E-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerBSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 74A (Ta), 417A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 17W (Ta), 536W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK®10 x 12 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11480 pF @ 50 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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