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SIR104ADP-T1-RE3

SIR104ADP-T1-RE3 Vishay Siliconix

sir104adp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.34 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIR104ADP-T1-RE3 Vishay Siliconix

Description: MOSFET N-CH 100V 18.8A/81A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V, Power Dissipation (Max): 5.4W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V.

Weitere Produktangebote SIR104ADP-T1-RE3 nach Preis ab 1.38 EUR bis 3.70 EUR

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SIR104ADP-T1-RE3 SIR104ADP-T1-RE3 Hersteller : Vishay Semiconductors sir104adp.pdf MOSFETs N-CHANNEL 100V PowerPAK SO-8
auf Bestellung 23908 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.26 EUR
10+2.69 EUR
100+2.16 EUR
250+1.99 EUR
500+1.81 EUR
1000+1.54 EUR
3000+1.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIR104ADP-T1-RE3 SIR104ADP-T1-RE3 Hersteller : Vishay Siliconix sir104adp.pdf Description: MOSFET N-CH 100V 18.8A/81A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
auf Bestellung 5937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.70 EUR
10+2.52 EUR
100+1.80 EUR
500+1.49 EUR
1000+1.38 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SIR104ADP-T1-RE3 Hersteller : Vishay sir104adp.pdf N-Channel 100 V MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR104ADP-T1-RE3 Hersteller : VISHAY sir104adp.pdf SIR104ADP-T1-RE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH