SIR104ADP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 3000+ | 1.34 EUR |
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Technische Details SIR104ADP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5.4W (Ta), 100W (Tc), Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V.
Weitere Produktangebote SIR104ADP-T1-RE3 nach Preis ab 1.38 EUR bis 4.54 EUR
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SIR104ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 18.8A/81A PPAK Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5.4W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 5937 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR104ADP-T1-RE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 100V PowerPAK SO-8 |
auf Bestellung 3214 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIR104ADP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 18.8A/81A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 81A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 5937 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.7 EUR |
| 10+ | 2.52 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.38 EUR |
| SIR104ADP-T1-RE3 |
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Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 100V PowerPAK SO-8
MOSFETs N-CHANNEL 100V PowerPAK SO-8
auf Bestellung 3214 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.54 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.71 EUR |
| 3000+ | 1.59 EUR |