SIR106DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR106DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V.
Weitere Produktangebote SIR106DP-T1-RE3 nach Preis ab 1.13 EUR bis 3.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIR106DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 16.1A PPAK Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 6804 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SIR106DP-T1-RE3 | Vishay / Siliconix |
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 1240 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIR106DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 16.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 16.1A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Ta), 65.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 6804 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.85 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.6 EUR |
| 1000+ | 1.36 EUR |
| SIR106DP-T1-RE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8
MOSFETs 100V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 1240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.29 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.26 EUR |
| 3000+ | 1.13 EUR |