SIR180ADP-T1-RE3 VISHAY
Hersteller: VISHAY
Description: VISHAY - SIR180ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 137 A, 2200 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 137A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Gate-Source-Schwellenspannung, max.: 3.6V
Verlustleistung: 83.3W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
| Anzahl | Privatkunde |
|---|---|
| 100+ | 2.65 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 1.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR180ADP-T1-RE3 VISHAY
Description: VISHAY - SIR180ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 137 A, 2200 µohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 137A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Gate-Source-Schwellenspannung, max.: 3.6V, Verlustleistung: 83.3W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 2200µohm.
Weitere Produktangebote SIR180ADP-T1-RE3 nach Preis ab 1.5 EUR bis 6.97 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SIR180ADP-T1-RE3 | Vishay / Siliconix |
MOSFETs POWRPK N CHAN 60V |
auf Bestellung 4711 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR180ADP-T1-RE3 | VISHAY |
Description: VISHAY - SIR180ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 137 A, 2200 µohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 137A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3.6V Verlustleistung: 83.3W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 2200µohm |
auf Bestellung 6637 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIR180ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR180ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.6V @ 250µA Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 13093 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR180ADP-T1-RE3 | Vishay |
Trans MOSFET N-CH 60V 35A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIR180ADP-T1-RE3 |
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Hersteller: Vishay / Siliconix
MOSFETs POWRPK N CHAN 60V
MOSFETs POWRPK N CHAN 60V
auf Bestellung 4711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.36 EUR |
| 10+ | 3 EUR |
| 100+ | 2.2 EUR |
| 250+ | 2.18 EUR |
| 500+ | 1.86 EUR |
| 1000+ | 1.7 EUR |
| 3000+ | 1.62 EUR |
| SIR180ADP-T1-RE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIR180ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 137 A, 2200 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 137A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3.6V
Verlustleistung: 83.3W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
Description: VISHAY - SIR180ADP-T1-RE3 - Leistungs-MOSFET, n-Kanal, 60 V, 137 A, 2200 µohm, PowerPAK SO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 137A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3.6V
Verlustleistung: 83.3W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 2200µohm
auf Bestellung 6637 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 6.97 EUR |
| 56+ | 4.18 EUR |
| 100+ | 2.65 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 1.94 EUR |
| SIR180ADP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.59 EUR |
| 6000+ | 1.5 EUR |
| SIR180ADP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3280 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 137A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 13093 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| 10+ | 3.5 EUR |
| 100+ | 2.4 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.83 EUR |
| SIR180ADP-T1-RE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 60V 35A 8-Pin PowerPAK SO EP T/R
Trans MOSFET N-CH 60V 35A 8-Pin PowerPAK SO EP T/R
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)