SIR186LDP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Ta), 80.3A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.84 EUR |
| 9000+ | 0.75 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR186LDP-T1-RE3 Vishay Siliconix
Description: VISHAY - SIR186LDP-T1-RE3 - N-CHANNEL 60-V (D-S) MOSFET, tariffCode: 85412900, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 80.3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.5V, Verlustleistung: 57W, SVHC: Lead (04-Feb-2026), Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: N Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0044ohm, directShipCharge: 25.
Weitere Produktangebote SIR186LDP-T1-RE3 nach Preis ab 0.82 EUR bis 3.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SIR186LDP-T1-RE3 | VISHAY |
Description: VISHAY - SIR186LDP-T1-RE3 - N-CHANNEL 60-V (D-S) MOSFET tariffCode: 85412900 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 80.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 57W SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: N Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0044ohm directShipCharge: 25 |
auf Bestellung 9356 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR186LDP-T1-RE3 | Vishay / Siliconix |
MOSFETs POWRPK N CHAN 60V |
auf Bestellung 11677 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR186LDP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 60-V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.8A (Ta), 80.3A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V |
auf Bestellung 29194 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR186LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80.3A Power dissipation: 57W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 150A Technology: TrenchFET® |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIR186LDP-T1-RE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIR186LDP-T1-RE3 - N-CHANNEL 60-V (D-S) MOSFET
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 80.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 57W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0044ohm
directShipCharge: 25
Description: VISHAY - SIR186LDP-T1-RE3 - N-CHANNEL 60-V (D-S) MOSFET
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 80.3A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 57W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: N Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0044ohm
directShipCharge: 25
auf Bestellung 9356 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 127+ | 1.98 EUR |
| 148+ | 1.57 EUR |
| 192+ | 1.12 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.86 EUR |
| 2500+ | 0.82 EUR |
| SIR186LDP-T1-RE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs POWRPK N CHAN 60V
MOSFETs POWRPK N CHAN 60V
auf Bestellung 11677 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.96 EUR |
| 1000+ | 0.88 EUR |
| 3000+ | 0.82 EUR |
| SIR186LDP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Ta), 80.3A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Description: N-CHANNEL 60-V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.8A (Ta), 80.3A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
auf Bestellung 29194 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.14 EUR |
| 11+ | 1.99 EUR |
| 50+ | 1.49 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.05 EUR |
| SIR186LDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80.3A
Power dissipation: 57W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 150A
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 80.3A; Idm: 150A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80.3A
Power dissipation: 57W
Case: PowerPAK® SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 150A
Technology: TrenchFET®
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)