SIR426DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.8 EUR |
| 6000+ | 0.74 EUR |
| 9000+ | 0.71 EUR |
| 15000+ | 0.68 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR426DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V.
Weitere Produktangebote SIR426DP-T1-GE3 nach Preis ab 0.79 EUR bis 3.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SIR426DP-T1-GE3 | Vishay Semiconductors |
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 48891 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR426DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 30A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V |
auf Bestellung 46056 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR426DP-T1-GE3 | Siliconix |
MOSFET N-CH 40V 30A PPAK SO-8 SIR426DP-T1-GE3 Vishay Siliconix TSIR426dp Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| SIR426DP-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
MOSFETs 40V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 48891 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.24 EUR |
| 10+ | 1.54 EUR |
| 100+ | 1.19 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| 3000+ | 0.79 EUR |
| SIR426DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
auf Bestellung 46056 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.01 EUR |
| 12+ | 1.9 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.9 EUR |
| SIR426DP-T1-GE3 |
|
Hersteller: Siliconix
MOSFET N-CH 40V 30A PPAK SO-8 SIR426DP-T1-GE3 Vishay Siliconix TSIR426dp
Anzahl je Verpackung: 10 Stücke
MOSFET N-CH 40V 30A PPAK SO-8 SIR426DP-T1-GE3 Vishay Siliconix TSIR426dp
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 3.02 EUR |