auf Bestellung 11146 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.04 EUR |
| 10+ | 1.28 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.65 EUR |
| 3000+ | 0.55 EUR |
| 6000+ | 0.5 EUR |
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Technische Details SIR4406DP-T1-GE3 Vishay / Siliconix
Description: N-CHANNEL 40-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.3A (Ta), 78A (Tc), Rds On (Max) @ Id, Vgs: 4.75mOhm @ 15A, 10V, Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 20 V.
Weitere Produktangebote SIR4406DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIR4406DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 40-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.3A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 4.75mOhm @ 15A, 10V Power Dissipation (Max): 3.9W (Ta), 41.6W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 20 V |
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