SIR4606DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V
Power Dissipation (Max): 3.7W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.78 EUR |
| 6000+ | 0.74 EUR |
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Technische Details SIR4606DP-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc), Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V, Power Dissipation (Max): 3.7W (Ta), 31.2W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V.
Weitere Produktangebote SIR4606DP-T1-GE3 nach Preis ab 0.79 EUR bis 2.55 EUR
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SIR4606DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 18.5mOhm @ 4A, 10V Power Dissipation (Max): 3.7W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V |
auf Bestellung 6921 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR4606DP-T1-GE3 | Hersteller : Vishay Semiconductors |
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SIR4606DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 10.5A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR4606DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 10.5A 8-Pin PowerPAK SO EP T/R |
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| SIR4606DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A Drain-source voltage: 60V Drain current: 16A On-state resistance: 22.5mΩ Type of transistor: N-MOSFET Power dissipation: 31.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIR4606DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 16A; Idm: 40A Drain-source voltage: 60V Drain current: 16A On-state resistance: 22.5mΩ Type of transistor: N-MOSFET Power dissipation: 31.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 13.5nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 40A Technology: TrenchFET® Mounting: SMD Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |