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SIR4608DP-T1-GE3

SIR4608DP-T1-GE3 Vishay Siliconix

sir4608dp.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 42.8A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+1.09 EUR
6000+ 1.04 EUR
Mindestbestellmenge: 3000
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Technische Details SIR4608DP-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 42.8A (Tc), Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V.

Weitere Produktangebote SIR4608DP-T1-GE3 nach Preis ab 1.16 EUR bis 2.63 EUR

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SIR4608DP-T1-GE3 SIR4608DP-T1-GE3 Hersteller : Vishay Siliconix sir4608dp.pdf Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 42.8A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 30 V
auf Bestellung 6050 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.63 EUR
13+ 2.16 EUR
100+ 1.68 EUR
500+ 1.42 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 10
SIR4608DP-T1-GE3 Hersteller : VISHAY sir4608dp.pdf SIR4608DP-T1-GE3 SMD N channel transistors
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