SIR464DP-T1-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.66 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.95 EUR |
| 3000+ | 0.86 EUR |
| 6000+ | 0.81 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR464DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 50A PPAK SO-8, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 69W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote SIR464DP-T1-GE3 nach Preis ab 0.95 EUR bis 2.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SIR464DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 50A PPAK SO-8Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 1681 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR464DP-T1-GE3 | VISHAY |
08+ DIP |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIR464DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 50A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 1681 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.95 EUR |
| SIR464DP-T1-GE3 |
|
Hersteller: VISHAY
08+ DIP
08+ DIP
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)