auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR464DP-T1-GE3 Vishay
Description: MOSFET N-CH 30V 50A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V, Power Dissipation (Max): 5.2W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V.
Weitere Produktangebote SIR464DP-T1-GE3 nach Preis ab 0.88 EUR bis 3.33 EUR
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SIR464DP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR464DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR464DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 50A 69W 3.1mohm @ 10V |
auf Bestellung 3394 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR464DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 50A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 15A, 10V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3545 pF @ 15 V |
auf Bestellung 5835 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR464DP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 30V 50A 69W 3.1mohm @ 10V |
auf Bestellung 2836 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR464DP-T1-GE3 | Hersteller : VISHAY |
08+ DIP |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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SIR464DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR464DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 50A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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| SIR464DP-T1-GE3 | Hersteller : VISHAY |
SIR464DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |