SIR500DP-T1-UE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
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Technische Details SIR500DP-T1-UE3 Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc), Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V.
Weitere Produktangebote SIR500DP-T1-UE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SIR500DP-T1-UE3 | Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) MOSFET 150 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc) Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
SIR500DP-T1-UE3 | Vishay / Siliconix |
MOSFETs N-Channel 30 V (D-S) MOSFET 150 C 4.7 m 10V 6.8 m 4.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIR500DP-T1-UE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 280.7A; Idm: 500A Case: PowerPAK® SO8 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Technology: TrenchFET® Drain current: 280.7A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: -12...16V On-state resistance: 470µΩ Pulsed drain current: 500A Power dissipation: 104.1W Gate charge: 54.3nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIR500DP-T1-UE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR500DP-T1-UE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs N-Channel 30 V (D-S) MOSFET 150 C 4.7 m 10V 6.8 m 4.5V
MOSFETs N-Channel 30 V (D-S) MOSFET 150 C 4.7 m 10V 6.8 m 4.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIR500DP-T1-UE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 280.7A; Idm: 500A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 280.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -12...16V
On-state resistance: 470µΩ
Pulsed drain current: 500A
Power dissipation: 104.1W
Gate charge: 54.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 280.7A; Idm: 500A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 280.7A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: -12...16V
On-state resistance: 470µΩ
Pulsed drain current: 500A
Power dissipation: 104.1W
Gate charge: 54.3nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH