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SIR500DP-T1-UE3

SIR500DP-T1-UE3 Vishay Siliconix

sir500dp.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
10+2.16 EUR
25+1.96 EUR
100+1.75 EUR
250+1.64 EUR
500+1.58 EUR
1000+1.53 EUR
2500+1.48 EUR
Mindestbestellmenge: 6
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Technische Details SIR500DP-T1-UE3 Vishay Siliconix

Description: N-CHANNEL 30 V (D-S) MOSFET 150, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc), Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V.

Weitere Produktangebote SIR500DP-T1-UE3 nach Preis ab 1.37 EUR bis 3.61 EUR

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SIR500DP-T1-UE3 SIR500DP-T1-UE3 Hersteller : Vishay / Siliconix sir500dp.pdf MOSFETs N-Channel 30 V (D-S) MOSFET 150 C 4.7 m 10V 6.8 m 4.5V
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.61 EUR
10+2.55 EUR
100+1.94 EUR
250+1.67 EUR
500+1.60 EUR
1000+1.43 EUR
3000+1.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIR500DP-T1-UE3 SIR500DP-T1-UE3 Hersteller : Vishay Siliconix sir500dp.pdf Description: N-CHANNEL 30 V (D-S) MOSFET 150
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85.9A (Ta), 350.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.47mOhm @20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104.1W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8960 pF @ 15 V
auf Bestellung 5988 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH