SIR5108DP-T1-RE3 Vishay / Siliconix
Hersteller: Vishay / SiliconixMOSFET N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 10.5 mohm a. 10V 10.1 mohm a. 7.5V
auf Bestellung 12000 Stücke:
Lieferzeit 536-540 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.46 EUR |
| 10+ | 2.04 EUR |
| 100+ | 1.62 EUR |
| 250+ | 1.51 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.17 EUR |
| 3000+ | 1.11 EUR |
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Technische Details SIR5108DP-T1-RE3 Vishay / Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc), Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V, Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V.
Weitere Produktangebote SIR5108DP-T1-RE3
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SIR5108DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc) Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V |
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SIR5108DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc) Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V |
Produkt ist nicht verfügbar |