| Anzahl | Preis |
|---|---|
| 1+ | 3.73 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.19 EUR |
| 3000+ | 1.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR5108DP-T1-RE3 Vishay / Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc), Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIR5108DP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
SIR5108DP-T1-RE3 | Vishay Siliconix |
 Description: N-CHANNEL 100 V (D-S) MOSFET POWInput Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SIR5108DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc) Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIR5108DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIR5108DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Rds On (Max) @ Id, Vgs: 7.45mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.4A (Ta), 55.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH