SIR512DP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 100 V (D-S) MOSFET POW, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6W (Ta), 96.2W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 25.1A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).