SIR570DP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 150 V (D-S) MOSFET POW, Input Capacitance (Ciss) (Max) @ Vds: 3740 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 77.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).