SIR578DP-T1-RE3 VISHAY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 70.2A; Idm: 200A, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 70.2A, Pulsed drain current: 200A, Power dissipation: 104W, Case: PowerPAK® SO8, Gate-source voltage: ±20V, On-state resistance: 10mΩ, Mounting: SMD, Gate charge: 49nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.