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SIR5808DP-T1-RE3

SIR5808DP-T1-RE3 Vishay Siliconix

sir5808dp.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 66.8A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 10A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.98 EUR
6000+0.95 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIR5808DP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 80 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 66.8A (Tc), Rds On (Max) @ Id, Vgs: 157mOhm @ 10A, 10V, Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V.

Weitere Produktangebote SIR5808DP-T1-RE3 nach Preis ab 0.93 EUR bis 3.41 EUR

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SIR5808DP-T1-RE3 SIR5808DP-T1-RE3 Hersteller : Vishay / Siliconix sir5808dp.pdf MOSFETs N-CHANNEL 80-V (D-S) MOSFET
auf Bestellung 11684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.57 EUR
10+1.95 EUR
100+1.35 EUR
500+1.2 EUR
1000+1.13 EUR
3000+0.94 EUR
6000+0.93 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIR5808DP-T1-RE3 SIR5808DP-T1-RE3 Hersteller : Vishay Siliconix sir5808dp.pdf Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.8A (Ta), 66.8A (Tc)
Rds On (Max) @ Id, Vgs: 157mOhm @ 10A, 10V
Power Dissipation (Max): 5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 40 V
auf Bestellung 11931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.2 EUR
100+1.5 EUR
500+1.19 EUR
1000+1.16 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SIR5808DP-T1-RE3 Hersteller : Vishay sir5808dp.pdf Trans MOSFET N-CH 80V 18.8A 8-Pin PowerPAK SO EP T/R
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