SIR584DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
| Anzahl | Preis |
|---|---|
| 7+ | 2.59 EUR |
| 10+ | 2.16 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.62 EUR |
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Technische Details SIR584DP-T1-RE3 Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 83.3W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIR584DP-T1-RE3 nach Preis ab 1.23 EUR bis 3.98 EUR
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SIR584DP-T1-RE3 | Vishay Semiconductors |
MOSFETs PPAKSO8 N-CH 80V 24.7A |
auf Bestellung 3738 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR584DP-T1-RE3 | Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 83.3W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2900 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIR584DP-T1-RE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs PPAKSO8 N-CH 80V 24.7A
MOSFETs PPAKSO8 N-CH 80V 24.7A
auf Bestellung 3738 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.98 EUR |
| 10+ | 2.57 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.29 EUR |
| 3000+ | 1.23 EUR |
| SIR584DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: N-CHANNEL 80 V (D-S) MOSFET POWE
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 83.3W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.7A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)