SIR606BDP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 10.9A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.86 EUR |
| 6000+ | 0.81 EUR |
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Technische Details SIR606BDP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 100V 10.9A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 5W (Ta), 62.5W (Tc).
Weitere Produktangebote SIR606BDP-T1-RE3 nach Preis ab 0.96 EUR bis 3.01 EUR
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SIR606BDP-T1-RE3 | Vishay / Siliconix |
MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 3887 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR606BDP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 10.9A PPAKSupplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V |
auf Bestellung 8914 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR606BDP-T1-RE3 |
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Hersteller: Vishay / Siliconix
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
MOSFET 100V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 3887 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.29 EUR |
| 10+ | 1.88 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.01 EUR |
| 3000+ | 0.96 EUR |
| SIR606BDP-T1-RE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 10.9A PPAK
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Description: MOSFET N-CH 100V 10.9A PPAK
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 17.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 38.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
auf Bestellung 8914 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.01 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.97 EUR |

