auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 139+ | 1.07 EUR |
| 140+ | 1.02 EUR |
| 142+ | 0.97 EUR |
| 152+ | 0.87 EUR |
| 250+ | 0.82 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR606DP-T1-GE3 Vishay
Description: MOSFET N-CH 100V 37A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V, Power Dissipation (Max): 44.5W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V.
Weitere Produktangebote SIR606DP-T1-GE3 nach Preis ab 0.69 EUR bis 2.39 EUR
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SIR606DP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 37A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 1860 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR606DP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 100V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 11489 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR606DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 37A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V Power Dissipation (Max): 44.5W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V |
auf Bestellung 2563 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR606DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 37A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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| SIR606DP-T1-GE3 | Hersteller : VISHAY |
SIR606DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIR606DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 37A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 16.2mOhm @ 15A, 10V Power Dissipation (Max): 44.5W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 50 V |
Produkt ist nicht verfügbar |