SiR616DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 20.2A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.84 EUR |
| 6000+ | 0.8 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SiR616DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 200V 20.2A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SiR616DP-T1-GE3 nach Preis ab 0.98 EUR bis 2.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SiR616DP-T1-GE3 | Vishay / Siliconix |
MOSFETs 200V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 10214 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
SiR616DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 200V 20.2A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA |
auf Bestellung 8845 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SiR616DP-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 200V Vds 20V Vgs PowerPAK SO-8
MOSFETs 200V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 10214 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.68 EUR |
| 10+ | 1.81 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 1.01 EUR |
| SiR616DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 20.2A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: MOSFET N-CH 200V 20.2A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
auf Bestellung 8845 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.83 EUR |
| 11+ | 1.64 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.98 EUR |