
SiR616DP-T1-GE3 Vishay / Siliconix
auf Bestellung 12652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 2.32 EUR |
10+ | 1.92 EUR |
100+ | 1.49 EUR |
500+ | 1.26 EUR |
1000+ | 1.21 EUR |
9000+ | 1.19 EUR |
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Technische Details SiR616DP-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 20.2A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc), Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V, Power Dissipation (Max): 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V.
Weitere Produktangebote SiR616DP-T1-GE3
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SIR616DP-T1-GE3 | Hersteller : Vishay |
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SIR616DP-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SiR616DP-T1-GE3 | Hersteller : VISHAY |
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Produkt ist nicht verfügbar |
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SiR616DP-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V |
Produkt ist nicht verfügbar |
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SiR616DP-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 50.5mOhm @ 10A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 7.5 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 100 V |
Produkt ist nicht verfügbar |