SIR622DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.94 EUR |
| 6000+ | 0.88 EUR |
| 9000+ | 0.85 EUR |
| 15000+ | 0.84 EUR |
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Technische Details SIR622DP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 150V 12.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc), Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V.
Weitere Produktangebote SIR622DP-T1-RE3 nach Preis ab 0.99 EUR bis 3.36 EUR
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SIR622DP-T1-RE3 | Vishay / Siliconix |
MOSFETs 150V Vds; 20V Vgs PowerPAK SO-8 |
auf Bestellung 112025 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR622DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 12.6A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc) Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V |
auf Bestellung 120801 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR622DP-T1-RE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 150V Vds; 20V Vgs PowerPAK SO-8
MOSFETs 150V Vds; 20V Vgs PowerPAK SO-8
auf Bestellung 112025 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.22 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.48 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.08 EUR |
| 3000+ | 0.99 EUR |
| SIR622DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
Description: MOSFET N-CH 150V 12.6A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 51.6A (Tc)
Rds On (Max) @ Id, Vgs: 17.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1516 pF @ 75 V
auf Bestellung 120801 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.36 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 1.06 EUR |