SiR624DP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 200V 18.6A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 7.5 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 52W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).