SIR624DP-T1-RE3 Vishay / Siliconix
auf Bestellung 5980 Stücke:
Lieferzeit 1015-1019 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.88 EUR |
| 10+ | 1.55 EUR |
| 100+ | 1.20 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.83 EUR |
| 3000+ | 0.80 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR624DP-T1-RE3 Vishay / Siliconix
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V.
Weitere Produktangebote SIR624DP-T1-RE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIR624DP-T1-RE3 | Hersteller : Vishay |
 SIR624DP-T1-RE3 |
Produkt ist nicht verfügbar |
||
| SIR624DP-T1-RE3 | Hersteller : VISHAY |
SIR624DP-T1-RE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
||
 |
SIR624DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
SIR624DP-T1-RE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 5.7A/18.6A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V |
Produkt ist nicht verfügbar |