SIR626LDP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/186A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
| Anzahl | Preis |
|---|---|
| 3000+ | 1.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR626LDP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/186A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V.
Weitere Produktangebote SIR626LDP-T1-RE3 nach Preis ab 1.14 EUR bis 4.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIR626LDP-T1-RE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 135nC On-state resistance: 2.1mΩ Power dissipation: 104W Gate-source voltage: ±20V Drain current: 186A Drain-source voltage: 60V Pulsed drain current: 400A Kind of package: reel; tape Case: PowerPAK® SO8 |
auf Bestellung 1647 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
SIR626LDP-T1-RE3 | Vishay / Siliconix |
MOSFETs 60V Vds; 20V Vgs PowerPAK SO-8 |
auf Bestellung 22651 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SIR626LDP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 45.6A/186A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V |
auf Bestellung 3358 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIR626LDP-T1-RE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 135nC
On-state resistance: 2.1mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain current: 186A
Drain-source voltage: 60V
Pulsed drain current: 400A
Kind of package: reel; tape
Case: PowerPAK® SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 135nC
On-state resistance: 2.1mΩ
Power dissipation: 104W
Gate-source voltage: ±20V
Drain current: 186A
Drain-source voltage: 60V
Pulsed drain current: 400A
Kind of package: reel; tape
Case: PowerPAK® SO8
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 36+ | 2.03 EUR |
| 50+ | 1.46 EUR |
| 100+ | 1.14 EUR |
| SIR626LDP-T1-RE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 60V Vds; 20V Vgs PowerPAK SO-8
MOSFETs 60V Vds; 20V Vgs PowerPAK SO-8
auf Bestellung 22651 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.38 EUR |
| 10+ | 2.9 EUR |
| 100+ | 2.01 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.64 EUR |
| 3000+ | 1.53 EUR |
| SIR626LDP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 45.6A/186A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
Description: MOSFET N-CH 60V 45.6A/186A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.6A (Ta), 186A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 30 V
auf Bestellung 3358 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.65 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.08 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.61 EUR |