auf Bestellung 5530 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 2.52 EUR |
| 73+ | 2.09 EUR |
| 100+ | 1.67 EUR |
| 250+ | 1.59 EUR |
| 500+ | 1.34 EUR |
| 1000+ | 1.11 EUR |
| 3000+ | 1.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR640ADP-T1-GE3 Vishay
Description: MOSFET N-CH 40V 41.6A/100A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V.
Weitere Produktangebote SIR640ADP-T1-GE3 nach Preis ab 1.03 EUR bis 4.47 EUR
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SIR640ADP-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP |
auf Bestellung 5530 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR640ADP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 40V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 2845 Stücke: Lieferzeit 14-28 Tag (e) |
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SIR640ADP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP |
Produkt ist nicht verfügbar |
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SIR640ADP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP |
Produkt ist nicht verfügbar |
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SIR640ADP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 41.6A 8-Pin PowerPAK SO EP |
Produkt ist nicht verfügbar |
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| SIR640ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 350A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SIR640ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 41.6A/100A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V |
Produkt ist nicht verfügbar |
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SIR640ADP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 41.6A/100A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41.6A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V |
Produkt ist nicht verfügbar |
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| SIR640ADP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 350A Power dissipation: 104W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |