SIR662DP-T1-GE3 Vishay Semiconductors
auf Bestellung 11682 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 2.97 EUR |
| 100+ | 2.04 EUR |
| 500+ | 1.83 EUR |
| 3000+ | 1.81 EUR |
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Technische Details SIR662DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4365 pF @ 30 V.
Weitere Produktangebote SIR662DP-T1-GE3 nach Preis ab 1.64 EUR bis 4.59 EUR
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SIR662DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 60V 60A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4365 pF @ 30 V |
auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR662DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO T/R |
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SIR662DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 60V 100A 8-Pin PowerPAK SO T/R |
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| SIR662DP-T1-GE3 | Hersteller : VISHAY |
SIR662DP-T1-GE3 SMD N channel transistors |
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SIR662DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4365 pF @ 30 V |
Produkt ist nicht verfügbar |