SIR680ADP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/125A PPAK
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.58 EUR |
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Technische Details SIR680ADP-T1-RE3 Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/125A PPAK, Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 6.25W (Ta), 104W (Tc).
Weitere Produktangebote SIR680ADP-T1-RE3 nach Preis ab 1.73 EUR bis 5.33 EUR
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SIR680ADP-T1-RE3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 30.7A/125A PPAK Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 |
auf Bestellung 7503 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR680ADP-T1-RE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 80V PowerPAK SO-8 |
auf Bestellung 4502 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIR680ADP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30.7A/125A PPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
Description: MOSFET N-CH 80V 30.7A/125A PPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
auf Bestellung 7503 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.35 EUR |
| 10+ | 3.23 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.73 EUR |
| SIR680ADP-T1-RE3 |
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Hersteller: Vishay Semiconductors
MOSFETs N-CHANNEL 80V PowerPAK SO-8
MOSFETs N-CHANNEL 80V PowerPAK SO-8
auf Bestellung 4502 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.33 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.41 EUR |
| 500+ | 1.97 EUR |
| 1000+ | 1.92 EUR |
| 3000+ | 1.83 EUR |