SIR681DP-T1-RE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
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Technische Details SIR681DP-T1-RE3 Vishay Siliconix
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc), Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V, Power Dissipation (Max): 6.25W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V.
Weitere Produktangebote SIR681DP-T1-RE3 nach Preis ab 2.12 EUR bis 5.72 EUR
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SIR681DP-T1-RE3 | Vishay Siliconix |
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V Power Dissipation (Max): 6.25W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V |
auf Bestellung 20786 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIR681DP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
Description: MOSFET P-CH 80V 17.6A/71.9A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 71.9A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 10A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4850 pF @ 40 V
auf Bestellung 20786 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.72 EUR |
| 10+ | 3.73 EUR |
| 100+ | 2.6 EUR |
| 500+ | 2.12 EUR |