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SIR800ADP-T1-RE3

SIR800ADP-T1-RE3 Vishay Semiconductors

sir800adp.pdf Hersteller: Vishay Semiconductors
MOSFETs 20V Vds; 12/-8V Vgs PowerPAK SO-8
auf Bestellung 4709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.69 EUR
10+1.31 EUR
100+0.89 EUR
500+0.71 EUR
1000+0.64 EUR
3000+0.56 EUR
6000+0.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIR800ADP-T1-RE3 Vishay Semiconductors

Description: MOSFET N-CH 20V 50.2A/177A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): +12V, -8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V.

Weitere Produktangebote SIR800ADP-T1-RE3 nach Preis ab 0.59 EUR bis 2.01 EUR

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SIR800ADP-T1-RE3 SIR800ADP-T1-RE3 Hersteller : Vishay Siliconix sir800adp.pdf Description: MOSFET N-CH 20V 50.2A/177A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
auf Bestellung 2911 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.01 EUR
14+1.26 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
SIR800ADP-T1-RE3 Hersteller : Vishay sir800adp.pdf N-Channel 20 V (D-S) MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIR800ADP-T1-RE3 SIR800ADP-T1-RE3 Hersteller : Vishay Siliconix sir800adp.pdf Description: MOSFET N-CH 20V 50.2A/177A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50.2A (Ta), 177A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): +12V, -8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3415 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH