SIR800DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 50A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V
Power Dissipation (Max): 5.2W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIR800DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 20V 50A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V, Power Dissipation (Max): 5.2W (Ta), 69W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 10 V.
Weitere Produktangebote SIR800DP-T1-GE3 nach Preis ab 1.27 EUR bis 3.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIR800DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V Vds 12V Vgs PowerPAK SO-8 |
auf Bestellung 6556 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SIR800DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 50A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 15A, 10V Power Dissipation (Max): 5.2W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5125 pF @ 10 V |
auf Bestellung 3969 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SIR800DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 35.4A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||
 |
SIR800DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 35.4A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| SIR800DP-T1-GE3 | Hersteller : VISHAY |
SIR800DP-T1-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |