Technische Details SIR820DP-T1-GE3 Vishay
Description: MOSFET N-CH 30V 40A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V, Power Dissipation (Max): 37.8W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3512 pF @ 15 V.
Weitere Produktangebote SIR820DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIR820DP-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A Mounting: SMD Kind of package: reel; tape Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 27.5W Polarisation: unipolar Gate charge: 75nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 70A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
| SIR820DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 10V Power Dissipation (Max): 37.8W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3512 pF @ 15 V |
Produkt ist nicht verfügbar |
||
 |
SIR820DP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 |
Produkt ist nicht verfügbar |
|
| SIR820DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 70A Mounting: SMD Kind of package: reel; tape Case: PowerPAK® SO8 Drain-source voltage: 30V Drain current: 40A On-state resistance: 6mΩ Type of transistor: N-MOSFET Power dissipation: 27.5W Polarisation: unipolar Gate charge: 75nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 70A |
Produkt ist nicht verfügbar |