auf Bestellung 46725 Stücke:
Lieferzeit 821-825 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.71 EUR |
| 10+ | 3.34 EUR |
| 100+ | 2.69 EUR |
| 500+ | 2.31 EUR |
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Technische Details SIR871DP-T1-GE3 Vishay / Siliconix
Description: MOSFET P-CH 100V 48A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 2.6V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3395 pF @ 50 V.
Weitere Produktangebote SIR871DP-T1-GE3 nach Preis ab 1.55 EUR bis 3.8 EUR
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SIR871DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 100V 48A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3395 pF @ 50 V |
auf Bestellung 2521 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR871DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 100V 48A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
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SIR871DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 100V 48A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3395 pF @ 50 V |
Produkt ist nicht verfügbar |