Produktrezensionen
Produktbewertung abgeben
Technische Details SIR873DP-T1-GE3 Vishay
Description: VISHAY - SIR873DP-T1-GE3 - MOSFET, P-CH, -150V, -37A, POWERPAK SO, tariffCode: 85412900, Transistormontage: Surface Mount, euEccn: NLR, Drain-Source-Spannung Vds: 150V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 37A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: -, isCanonical: Y, MSL: -, Gate-Source-Schwellenspannung, max.: 4V, Verlustleistung: 104W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, productTraceability: No, usEccn: EAR99, Kanaltyp: P Channel, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.0475ohm, directShipCharge: 25.
Weitere Produktangebote SIR873DP-T1-GE3 nach Preis ab 1.18 EUR bis 4.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIR873DP-T1-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 150V 37A PPAK SO-8Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) |
auf Bestellung 81000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SIR873DP-T1-GE3 | Vishay |
Trans MOSFET P-CH 150V 37A 8-Pin PowerPAK SO EP T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
SIR873DP-T1-GE3 | Vishay Semiconductors |
MOSFETs -150V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 12497 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SIR873DP-T1-GE3 | VISHAY |
Description: VISHAY - SIR873DP-T1-GE3 - MOSFET, P-CH, -150V, -37A, POWERPAK SO tariffCode: 85412900 Transistormontage: Surface Mount euEccn: NLR Drain-Source-Spannung Vds: 150V rohsCompliant: Y-EX Dauer-Drainstrom Id: 37A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 104W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: No usEccn: EAR99 Kanaltyp: P Channel Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.0475ohm directShipCharge: 25 |
auf Bestellung 8524 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
SIR873DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 150V 37A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V |
auf Bestellung 82257 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIR873DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 37A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 150V 37A PPAK SO-8
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 81000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.3 EUR |
| 6000+ | 1.21 EUR |
| 9000+ | 1.18 EUR |
| SIR873DP-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 150V 37A 8-Pin PowerPAK SO EP T/R
Trans MOSFET P-CH 150V 37A 8-Pin PowerPAK SO EP T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 2.18 EUR |
| SIR873DP-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -150V Vds 20V Vgs PowerPAK SO-8
MOSFETs -150V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 12497 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.76 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.45 EUR |
| 3000+ | 1.24 EUR |
| SIR873DP-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SIR873DP-T1-GE3 - MOSFET, P-CH, -150V, -37A, POWERPAK SO
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 37A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 104W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0475ohm
directShipCharge: 25
Description: VISHAY - SIR873DP-T1-GE3 - MOSFET, P-CH, -150V, -37A, POWERPAK SO
tariffCode: 85412900
Transistormontage: Surface Mount
euEccn: NLR
Drain-Source-Spannung Vds: 150V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 37A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 104W
Bauform - Transistor: PowerPAK SO
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: No
usEccn: EAR99
Kanaltyp: P Channel
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.0475ohm
directShipCharge: 25
auf Bestellung 8524 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 4.27 EUR |
| 70+ | 3.32 EUR |
| 77+ | 2.78 EUR |
| 100+ | 2.46 EUR |
| 250+ | 2.3 EUR |
| 500+ | 2.09 EUR |
| SIR873DP-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 37A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V
Description: MOSFET P-CH 150V 37A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 47.5mOhm @ 10A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1805 pF @ 75 V
auf Bestellung 82257 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.52 EUR |
| 10+ | 2.9 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.58 EUR |
| 1000+ | 1.45 EUR |