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SIR878BDP-T1-RE3

SIR878BDP-T1-RE3 Vishay Siliconix

sir878bdp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/42.5A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.98 EUR
6000+0.96 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIR878BDP-T1-RE3 Vishay Siliconix

Description: MOSFET N-CH 100V 12A/42.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V.

Weitere Produktangebote SIR878BDP-T1-RE3 nach Preis ab 1.13 EUR bis 2.27 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIR878BDP-T1-RE3 SIR878BDP-T1-RE3 Hersteller : Vishay / Siliconix sir878bdp.pdf MOSFETs 100V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 34384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.99 EUR
10+1.66 EUR
100+1.36 EUR
250+1.29 EUR
500+1.16 EUR
1000+1.13 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIR878BDP-T1-RE3 SIR878BDP-T1-RE3 Hersteller : Vishay Siliconix sir878bdp.pdf Description: MOSFET N-CH 100V 12A/42.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
auf Bestellung 8882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
10+1.81 EUR
100+1.44 EUR
500+1.2 EUR
1000+1.16 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIR878BDP-T1-RE3 Hersteller : VISHAY sir878bdp.pdf SIR878BDP-T1-RE3 SMD N channel transistors
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Im Einkaufswagen  Stück im Wert von  UAH