SIR878BDP-T1-RE3 Vishay / Siliconix
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.77 EUR |
| 10+ | 3.12 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.71 EUR |
| 1000+ | 1.63 EUR |
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Technische Details SIR878BDP-T1-RE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 12A/42.5A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V.
Weitere Produktangebote SIR878BDP-T1-RE3 nach Preis ab 1.19 EUR bis 4.94 EUR
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SIR878BDP-T1-RE3 | Vishay Siliconix |
 Description: MOSFET N-CH 100V 12A/42.5A PPAKPackaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V |
auf Bestellung 2745 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIR878BDP-T1-RE3 | Vishay |
Trans MOSFET N-CH 100V 12A 8-Pin PowerPAK SO EP |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
|
| SIR878BDP-T1-RE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 12A/42.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
Description: MOSFET N-CH 100V 12A/42.5A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 42.5A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 50 V
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.94 EUR |
| 10+ | 3.18 EUR |
| 100+ | 2.17 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.62 EUR |
| SIR878BDP-T1-RE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 12A 8-Pin PowerPAK SO EP
Trans MOSFET N-CH 100V 12A 8-Pin PowerPAK SO EP
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 2.49 EUR |
| 79+ | 2.15 EUR |
| 80+ | 2.05 EUR |
| 102+ | 1.55 EUR |
| 250+ | 1.25 EUR |
| 500+ | 1.19 EUR |