SIR882DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.64 EUR |
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Technische Details SIR882DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V, Power Dissipation (Max): 5.4W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 50 V.
Weitere Produktangebote SIR882DP-T1-GE3 nach Preis ab 1.76 EUR bis 4.38 EUR
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SIR882DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR882DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SIR882DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V Power Dissipation (Max): 5.4W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1930 pF @ 50 V |
auf Bestellung 3063 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR882DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 100 Volts 60 Amps 83 Watts |
auf Bestellung 17134 Stücke: Lieferzeit 10-14 Tag (e) |
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SIR882DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 17.6A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SIR882DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SIR882DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 60A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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| SIR882DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 80A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SIR882DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 80A; 83W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 80A Power dissipation: 83W Case: PowerPAK® SO8 Gate-source voltage: ±20V On-state resistance: 11.5mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |