SIRA04DP-T1-GE3 Vishay Semiconductors
auf Bestellung 10607 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.52 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.95 EUR |
| 3000+ | 0.88 EUR |
| 6000+ | 0.85 EUR |
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Technische Details SIRA04DP-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 40A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V, Power Dissipation (Max): 5W (Ta), 62.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V.
Weitere Produktangebote SIRA04DP-T1-GE3 nach Preis ab 0.97 EUR bis 2.55 EUR
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SIRA04DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 30V 40A PPAK SO-8Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V |
auf Bestellung 2993 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA04DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 40A 8-Pin PowerPAK SO EP T/R |
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| SIRA04DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W Mounting: SMD Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: reel; tape Gate charge: 77nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: -16...20V Pulsed drain current: 80A Case: PowerPAK® SO8 Anzahl je Verpackung: 1 Stücke |
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SIRA04DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 40A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SIRA04DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 40W Mounting: SMD Drain-source voltage: 30V Drain current: 40A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of package: reel; tape Gate charge: 77nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: -16...20V Pulsed drain current: 80A Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |