SIRA14DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
Description: MOSFET N-CH 30V 58A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V
auf Bestellung 2340 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.56 EUR |
19+ | 1.37 EUR |
100+ | 0.95 EUR |
500+ | 0.79 EUR |
1000+ | 0.67 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIRA14DP-T1-GE3 Vishay Siliconix
Description: VISHAY - SIRA14DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 20 A, 0.00425 ohm, PowerPAK SO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 20A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.1V, euEccn: NLR, Verlustleistung: 31.2W, Bauform - Transistor: PowerPAK SO, Anzahl der Pins: 8Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.00425ohm.
Weitere Produktangebote SIRA14DP-T1-GE3 nach Preis ab 0.59 EUR bis 1.6 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SIRA14DP-T1-GE3 | Hersteller : Vishay Semiconductors | MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 35946 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
SIRA14DP-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIRA14DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 20 A, 0.00425 ohm, PowerPAK SO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 31.2W Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.00425ohm |
auf Bestellung 4592 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
SIRA14DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 19.8A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
SIRA14DP-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 30V 19.8A 8-Pin PowerPAK SO EP T/R |
Produkt ist nicht verfügbar |
||||||||||||||||||
SIRA14DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 130A Power dissipation: 20W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
SIRA14DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 58A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 31.2W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 15 V |
Produkt ist nicht verfügbar |
||||||||||||||||||
SIRA14DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 46A; Idm: 130A; 20W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 130A Power dissipation: 20W Case: PowerPAK® SO8 Gate-source voltage: -16...20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |