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SIRA18ADP-T1-GE3

SIRA18ADP-T1-GE3 Vishay Siliconix

sira18adp.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30.6A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 3519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
28+ 0.64 EUR
100+ 0.48 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 24
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Technische Details SIRA18ADP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 30.6A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc), Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V, Power Dissipation (Max): 14.7W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V.

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SIRA18ADP-T1-GE3 SIRA18ADP-T1-GE3 Hersteller : Vishay Semiconductors sira18adp-1761556.pdf MOSFET 30V Vds 20V Vgs PowerPAK SO-8
auf Bestellung 15 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
47+1.11 EUR
55+ 0.95 EUR
100+ 0.71 EUR
500+ 0.56 EUR
Mindestbestellmenge: 47
SIRA18ADP-T1-GE3 SIRA18ADP-T1-GE3 Hersteller : Vishay sira18adp.pdf Trans MOSFET N-CH 30V 30.6A 8-Pin PowerPAK SO EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
SIRA18ADP-T1-GE3 Hersteller : VISHAY sira18adp.pdf SIRA18ADP-T1-GE3 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
186+0.39 EUR
269+ 0.27 EUR
285+ 0.25 EUR
Mindestbestellmenge: 186
SIRA18ADP-T1-GE3 SIRA18ADP-T1-GE3 Hersteller : Vishay Siliconix sira18adp.pdf Description: MOSFET N-CH 30V 30.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Power Dissipation (Max): 14.7W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
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