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SIRA20BDP-T1-GE3

SIRA20BDP-T1-GE3 Vishay Siliconix

sira20bdp.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.15 EUR
6000+1.1 EUR
9000+1.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIRA20BDP-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 25V 82A/335A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +16V, -12V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 6.3W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).

Weitere Produktangebote SIRA20BDP-T1-GE3 nach Preis ab 1.02 EUR bis 3.15 EUR

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SIRA20BDP-T1-GE3 SIRA20BDP-T1-GE3 Vishay Siliconix sira20bdp.pdf Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 10920 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.78 EUR
10+2.28 EUR
100+1.77 EUR
500+1.5 EUR
1000+1.22 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIRA20BDP-T1-GE3 SIRA20BDP-T1-GE3 Vishay / Siliconix sira20bdp.pdf MOSFETs PPAKSO8 N-CH 25V 82A
auf Bestellung 3022 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.15 EUR
10+2.11 EUR
100+1.44 EUR
500+1.15 EUR
1000+1.08 EUR
3000+1.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIRA20BDP-T1-GE3 sira20bdp.pdf
SIRA20BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 10920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.78 EUR
10+2.28 EUR
100+1.77 EUR
500+1.5 EUR
1000+1.22 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
SIRA20BDP-T1-GE3 sira20bdp.pdf
SIRA20BDP-T1-GE3
Hersteller: Vishay / Siliconix
MOSFETs PPAKSO8 N-CH 25V 82A
auf Bestellung 3022 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.15 EUR
10+2.11 EUR
100+1.44 EUR
500+1.15 EUR
1000+1.08 EUR
3000+1.02 EUR
Im Einkaufswagen  Stück im Wert von  UAH