SIRA20BDP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.37 EUR |
| 6000+ | 1.31 EUR |
| 9000+ | 1.25 EUR |
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Technische Details SIRA20BDP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +16V, -12V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 6.3W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIRA20BDP-T1-GE3 nach Preis ab 1.21 EUR bis 3.75 EUR
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SIRA20BDP-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 25V 82A/335A PPAK Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): +16V, -12V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 6.3W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 10920 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA20BDP-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAKSO8 N-CH 25V 82A |
auf Bestellung 3022 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIRA20BDP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 25V 82A/335A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 9950 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): +16V, -12V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.3W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Ta), 335A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 10920 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.45 EUR |
| SIRA20BDP-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs PPAKSO8 N-CH 25V 82A
MOSFETs PPAKSO8 N-CH 25V 82A
auf Bestellung 3022 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.75 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.29 EUR |
| 3000+ | 1.21 EUR |