SiRA88DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 45.5A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.31 EUR |
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Technische Details SiRA88DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 45.5A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V.
Weitere Produktangebote SiRA88DP-T1-GE3 nach Preis ab 0.34 EUR bis 0.86 EUR
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SiRA88DP-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 30V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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SiRA88DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 45.5A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45.5A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 15 V |
auf Bestellung 4711 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA88DP-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SIRA88DP-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 45.5 A, 0.0054 ohm, PowerPAK SO, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 Dauer-Drainstrom Id: 45.5 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 25 Bauform - Transistor: PowerPAK SO Anzahl der Pins: 8 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0054 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 2.4 SVHC: Lead (19-Jan-2021) |
auf Bestellung 5198 Stücke: Lieferzeit 14-21 Tag (e) |
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SIRA88DP-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SiRA88DP-T1-GE3 | Hersteller : VISHAY |
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Produkt ist nicht verfügbar |