SIRA99DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 47.9A/195A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.86 EUR |
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Technische Details SIRA99DP-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 47.9A/195A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +16V, -20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 6.35W (Ta), 104W (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIRA99DP-T1-GE3 nach Preis ab 1.99 EUR bis 5.21 EUR
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SIRA99DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 47.9A/195A PPAKInput Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 6.35W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc) Vgs (Max): +16V, -20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) |
auf Bestellung 6387 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRA99DP-T1-GE3 | Vishay Semiconductors |
MOSFETs PPAKSO8 P-CH 30V 47.9A |
auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIRA99DP-T1-GE3 |
![]() |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 47.9A/195A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 47.9A/195A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 10955 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.35W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 47.9A (Ta), 195A (Tc)
Vgs (Max): +16V, -20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
auf Bestellung 6387 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.75 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 1.99 EUR |
| SIRA99DP-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs PPAKSO8 P-CH 30V 47.9A
MOSFETs PPAKSO8 P-CH 30V 47.9A
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 5.21 EUR |
| 10+ | 3.41 EUR |
| 100+ | 2.38 EUR |
| 500+ | 2.06 EUR |
| 3000+ | 2.04 EUR |

