SiRC16DP-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 25V 60A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V
Power Dissipation (Max): 54.3W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V
auf Bestellung 762 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 1.97 EUR |
| 11+ | 1.62 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.06 EUR |
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Technische Details SiRC16DP-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 25V 60A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V, Power Dissipation (Max): 54.3W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V.
Weitere Produktangebote SiRC16DP-T1-GE3 nach Preis ab 0.91 EUR bis 1.99 EUR
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SiRC16DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 25V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 7389 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRC16DP-T1-GE3 Produktcode: 181487 |
Transistoren > MOSFET N-CH |
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| SiRC16DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 250A Power dissipation: 34.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SiRC16DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK SO-8 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V |
Produkt ist nicht verfügbar |
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| SiRC16DP-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 25V; 60A Type of transistor: N-MOSFET + Schottky Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 250A Power dissipation: 34.7W Case: PowerPAK® SO8 Gate-source voltage: ±20/±-16V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |