Weitere Produktangebote SIRC16DP-T1-GE3 nach Preis ab 0.91 EUR bis 3.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SiRC16DP-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 25V 60A PPAK SO-8Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
SiRC16DP-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 25V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 6489 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
SiRC16DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 60A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 0.96mOhm @ 15A, 10V Power Dissipation (Max): 54.3W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 10 V |
auf Bestellung 18082 Stücke: Lieferzeit 10-14 Tag (e) |
|