SiRS4302DP-T1-GE3 Vishay / Siliconix
Hersteller: Vishay / SiliconixMOSFETs N-Channel 30 V (D-S) MOSFET PowerPAK SO-8, 0.57 mohm a. 10V, 0.83 mohm a. 4.5V
auf Bestellung 5116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.83 EUR |
| 10+ | 3.85 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 2.11 EUR |
| 3000+ | 2.08 EUR |
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Technische Details SiRS4302DP-T1-GE3 Vishay / Siliconix
Description: N-CHANNEL 30 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Ta), 478A (Tc), Rds On (Max) @ Id, Vgs: 0.57mOhm @ 20A, 10V, Power Dissipation (Max): 6.9W (Ta), 208W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 15 V.
Weitere Produktangebote SiRS4302DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIRS4302DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 478A T/R |
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SiRS4302DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Ta), 478A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 20A, 10V Power Dissipation (Max): 6.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 15 V |
Produkt ist nicht verfügbar |
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SiRS4302DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 30 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 87A (Ta), 478A (Tc) Rds On (Max) @ Id, Vgs: 0.57mOhm @ 20A, 10V Power Dissipation (Max): 6.9W (Ta), 208W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10150 pF @ 15 V |
Produkt ist nicht verfügbar |