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SIRS4400DP-T1-RE3

SIRS4400DP-T1-RE3 Vishay Siliconix

sirs4400dp.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 20 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+3.30 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIRS4400DP-T1-RE3 Vishay Siliconix

Description: N-CHANNEL 40 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Ta), 440A (Tc), Rds On (Max) @ Id, Vgs: 0.69mOhm @ 20A, 10V, Power Dissipation (Max): 7.4W (Ta), 240W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 20 V.

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SIRS4400DP-T1-RE3 SIRS4400DP-T1-RE3 Hersteller : Vishay Siliconix sirs4400dp.pdf Description: N-CHANNEL 40 V (D-S) MOSFET POWE
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 20A, 10V
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 295 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13730 pF @ 20 V
auf Bestellung 5973 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.66 EUR
10+5.84 EUR
100+4.21 EUR
500+3.50 EUR
1000+3.30 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIRS4400DP-T1-RE3 SIRS4400DP-T1-RE3 Hersteller : Vishay / Siliconix sirs4400dp.pdf MOSFET N-Channel 40 V (D-S) MOSFET PowerPAK SO-8, 0.69 mohm a. 10V, 0.96 mohm a. 4.5V
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Im Einkaufswagen  Stück im Wert von  UAH