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SIRS5100DP-T1-GE3

SIRS5100DP-T1-GE3 Vishay Siliconix

sirs5100dp.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 225A (Tc)
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.51 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIRS5100DP-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 100 V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 225A (Tc), Power Dissipation (Max): 7.4W (Ta), 240W (Tc).

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SIRS5100DP-T1-GE3 SIRS5100DP-T1-GE3 Hersteller : Vishay / Siliconix sirs5100dp.pdf MOSFETs MOSFET N-Channel 100V (D-S), PowerPAK SO-8S, 2.5 mohm at 10V
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.00 EUR
10+4.49 EUR
100+3.63 EUR
500+3.22 EUR
1000+3.04 EUR
3000+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIRS5100DP-T1-GE3 SIRS5100DP-T1-GE3 Hersteller : Vishay Siliconix sirs5100dp.pdf Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 225A (Tc)
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
auf Bestellung 4142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.25 EUR
10+4.77 EUR
100+3.37 EUR
500+2.77 EUR
1000+2.58 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIRS5100DP-T1-GE3 Hersteller : Vishay sirs5100dp.pdf Trans MOSFET N-CH 100V 225A 8-Pin PowerPAK SO-S EP T/R
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Im Einkaufswagen  Stück im Wert von  UAH