
SIRS5100DP-T1-GE3 Vishay Siliconix

Description: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 225A (Tc)
Power Dissipation (Max): 7.4W (Ta), 240W (Tc)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 2.51 EUR |
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Technische Details SIRS5100DP-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 225A (Tc), Power Dissipation (Max): 7.4W (Ta), 240W (Tc).
Weitere Produktangebote SIRS5100DP-T1-GE3 nach Preis ab 2.58 EUR bis 7.25 EUR
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SIRS5100DP-T1-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 2360 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRS5100DP-T1-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 225A (Tc) Power Dissipation (Max): 7.4W (Ta), 240W (Tc) |
auf Bestellung 4142 Stücke: Lieferzeit 10-14 Tag (e) |
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SIRS5100DP-T1-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |