SIRS5800DP-T1-GE3 Vishay / Siliconix
Hersteller: Vishay / SiliconixMOSFETs N-Channel 60 V (D-S) MOSFET PowerPAK 1212-8, 29 mohm a. 10V, 38 mohm a. 4.5V
auf Bestellung 8164 Stücke:
Lieferzeit 234-238 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.03 EUR |
| 10+ | 4.21 EUR |
| 25+ | 3.98 EUR |
| 100+ | 3.40 EUR |
| 250+ | 3.22 EUR |
| 500+ | 3.03 EUR |
| 1000+ | 2.59 EUR |
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Technische Details SIRS5800DP-T1-GE3 Vishay / Siliconix
Description: N-CHANNEL 80 V (D-S) MOSFET POWE, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V, Power Dissipation (Max): 7.4W (Ta), 240W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V.
Weitere Produktangebote SIRS5800DP-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIRS5800DP-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 80V 265A 8-Pin PowerPAK SO-S EP T/R |
Produkt ist nicht verfügbar |
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SIRS5800DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V |
Produkt ist nicht verfügbar |
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SIRS5800DP-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 80 V (D-S) MOSFET POWE Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 265A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Power Dissipation (Max): 7.4W (Ta), 240W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 40 V |
Produkt ist nicht verfügbar |