SIS110DN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.2A/14.2A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 14.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.34 EUR |
| 9000+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIS110DN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 100V 5.2A/14.2A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 24W (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 14.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIS110DN-T1-GE3 nach Preis ab 0.45 EUR bis 1.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SIS110DN-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 5.2A/14.2A PPAK Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 14.2A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V Power Dissipation (Max): 3.2W (Ta), 24W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V |
auf Bestellung 19507 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SIS110DN-T1-GE3 | Vishay / Siliconix |
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8 |
auf Bestellung 91665 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIS110DN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.2A/14.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
Description: MOSFET N-CH 100V 5.2A/14.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 14.2A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 3.2W (Ta), 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 19507 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.25 EUR |
| 21+ | 0.87 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.45 EUR |
| SIS110DN-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 91665 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.19 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.48 EUR |
| 6000+ | 0.46 EUR |