SIS112LDN-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: N-CHANNEL 100 V (D-S) MOSFET POW
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.41 EUR |
| 6000+ | 0.39 EUR |
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Technische Details SIS112LDN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 100 V (D-S) MOSFET POW, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc), Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V, Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V.
Weitere Produktangebote SIS112LDN-T1-GE3 nach Preis ab 0.46 EUR bis 1.09 EUR
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SIS112LDN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100 V (D-S) MOSFET POW Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 8.8A (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 3.5A, 10V Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS112LDN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 3.5A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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SIS112LDN-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 3.5A 8-Pin PowerPAK 1212 EP T/R |
Produkt ist nicht verfügbar |
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| SIS112LDN-T1-GE3 | Hersteller : Vishay |
Vishay |
Produkt ist nicht verfügbar |