Produkte > VISHAY SILICONIX > SIS184DN-T1-GE3
SIS184DN-T1-GE3

SIS184DN-T1-GE3 Vishay Siliconix

sis184dn.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17.4A/65.3A PPAK
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.03 EUR
6000+0.98 EUR
9000+0.94 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SIS184DN-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 60V 17.4A/65.3A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: PowerPAK® 1212-8, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V.

Weitere Produktangebote SIS184DN-T1-GE3 nach Preis ab 0.97 EUR bis 2.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIS184DN-T1-GE3 SIS184DN-T1-GE3 Hersteller : Vishay Siliconix sis184dn.pdf Description: MOSFET N-CH 60V 17.4A/65.3A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.4A (Ta), 65.3A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1490 pF @ 30 V
auf Bestellung 14940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.50 EUR
10+2.04 EUR
100+1.59 EUR
500+1.35 EUR
1000+1.10 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIS184DN-T1-GE3 SIS184DN-T1-GE3 Hersteller : Vishay / Siliconix sis184dn.pdf MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8
auf Bestellung 28437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.64 EUR
10+1.94 EUR
100+1.46 EUR
500+1.16 EUR
1000+1.02 EUR
3000+0.98 EUR
9000+0.97 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIS184DN-T1-GE3 Hersteller : VISHAY sis184dn.pdf SIS184DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH