SIS184LDN-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
FET Type: N-Channel
| Anzahl | Preis |
|---|---|
| 3000+ | 1.23 EUR |
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Technische Details SIS184LDN-T1-GE3 Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® 1212-8, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK® 1212-8, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 3.7W (Ta), 52W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc), FET Type: N-Channel.
Weitere Produktangebote SIS184LDN-T1-GE3 nach Preis ab 1.11 EUR bis 3.45 EUR
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SIS184LDN-T1-GE3 | Vishay Siliconix |
Description: N-CHANNEL 60 V (D-S) MOSFET POWE Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK® 1212-8 |
auf Bestellung 5997 Stücke: Lieferzeit 10-14 Tag (e) |
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SIS184LDN-T1-GE3 | Vishay Semiconductors |
MOSFETs POWRPK N CHAN 60V |
auf Bestellung 17550 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIS184LDN-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
Description: N-CHANNEL 60 V (D-S) MOSFET POWE
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 69.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8
auf Bestellung 5997 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.73 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.8 EUR |
| 500+ | 1.52 EUR |
| 1000+ | 1.29 EUR |
| SIS184LDN-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs POWRPK N CHAN 60V
MOSFETs POWRPK N CHAN 60V
auf Bestellung 17550 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 3.45 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.58 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.18 EUR |
| 3000+ | 1.11 EUR |